Characterization of Chromium Compensated GaAs as an x-ray Sensor Material for Charge-Integrating Pixel Array Detectors

Abstract

We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and x-ray tube energy. The material is a photoresistor and can be biased to collect either electrons or holes by the pixel circuitry. Both are studied here. Previous studies have shown substantial hole trapping. This trapping and other sensor properties give rise to several non-ideal effects which include an extended point spread function, variations in the effective pixel size, and rate dependent offset shifts. The magnitude of these effects varies with temperature and bias, mandating good temperature uniformity in the sensor and very good temperature stabilization, as well as a carefully selected bias voltage.

arXiv commentrevised version after 2nd peer review

References in corpus (4)

• Real-Space x-ray tomographic reconstruction of randomly oriented objects with sparse data frames
• The single photon sensitivity of the Adaptive Gain Integrating Pixel Detector
• Characterization of CdTe Sensors with Schottky Contacts Coupled to Charge-Integrating Pixel Array Detectors for X-Ray Science
• Sub-Microsecond X-Ray Imaging Using Hole-Collecting Schottky type CdTe with Charge-Integrating Pixel Array Detectors

Cited by in corpus (3)

• Megapixels @ Megahertz -- The AGIPD High-Speed Cameras for the European XFEL
• Quantifying the Performance of a Hybrid Pixel Detector with GaAs:Cr Sensor for Transmission Electron Microscopy
• Characterization of an architecture for front-end pixel binning in an integrating pixel array detector