Quantifying the Performance of a Hybrid Pixel Detector with GaAs:Cr Sensor for Transmission Electron Microscopy
arXiv:2009.14565 · doi:10.1016/j.ultramic.2021.113298
Abstract
Hybrid pixel detectors (HPDs) have been shown to be highly effective for diffraction-based and time-resolved studies in transmission electron microscopy, but their performance is limited by the fact that high-energy electrons scatter over long distances in their thick Si sensors. An advantage of HPDs compared to monolithic active pixel sensors (MAPS) is that their sensor does not need to be fabricated from Si. We have compared the performance of the Medipix3 HPD with a Si sensor and with a GaAs:Cr sensor using primary electrons in the energy range of 60 - 300keV. We describe the measurement and calculation of the detectors' modulation transfer function (MTF) and detective quantum efficiency (DQE), which show that the performance of the GaAs:Cr device is markedly superior to that of the Si device for high-energy electrons.
15 pages + references, 13 figures
Cited by in corpus (5)
- Event driven 4D STEM acquisition with a Timepix3 detector: microsecond dwell time and faster scans for high precision and low dose applications
- Creation of Optical Cat and GKP States Using Shaped Free Electrons
- Removing constraints of 4D-STEM with a framework for event-driven acquisition and processing
- Measurement of the Resolution of the Timepix4 Detector for 100 keV and 200 keV Electrons for Transmission Electron Microscopy
- Energy-Resolved EBSD using a Monolithic Direct Electron Detector