197 citations · 407 across the 6 of their papers we have counts for
6 papers
Optimization of edge state velocity in the integer quantum Hall regime
Harshad Sahasrabudhe, Bozidar Novakovic, James Nakamura +5
Observation of interference in the quantum Hall regime may be hampered by a small edge state velocity due to finite phase coherence time. Therefore designing two quantum point cont…
Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass
Hesameddin Ilatikhameneh, Tarek Ameen, Bozidar Novakovic +3
Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last 4 decades. However, scaling channel lengths beyond 10 nm has become exceptionally cha…
Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials
Hesameddin Ilatikhameneh, Yaohua Tan, Bozidar Novakovic +3
In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quant…
Time-dependent transport in open systems based on quantum master equations
I. Knezevic, B. Novakovic
Electrons in the active region of a nanostructure constitute an open many-body quantum system, interacting with contacts, phonons, and photons. We review the basic premises of the…
Non-Markovian electron dynamics in nanostructures coupled to dissipative contacts
B. Novakovic, I. Knezevic
In quasiballistic semiconductor nanostructures, carrier exchange between the active region and dissipative contacts is the mechanism that governs relaxation. In this paper, we pres…
Efficient and realistic device modeling from atomic detail to the nanoscale
J. E. Fonseca, T. Kubis, M. Povolotskyi +8
As semiconductor devices scale to new dimensions, the materials and designs become more dependent on atomic details. NEMO5 is a nanoelectronics modeling package designed for compre…