112 citations · 214 across the 8 of their papers we have counts for
7 papers · 1 filter
Probing low noise at the MOS interface with a spin-orbit qubit
Ryan M. Jock, N. Tobias Jacobson, Patrick Harvey-Collard +12
The silicon metal-oxide-semiconductor (MOS) material system is technologically important for the implementation of electron spin-based quantum information technologies. Researchers…
Coupling MOS Quantum Dot and Phosphorus Donor Qubit Systems
M. Rudolph, P. Harvey-Collard, R. Jock +8
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples…
Spectroscopy of multi-electrode tunnel barriers
A. Shirkhorshidian, John King Gamble, L. Maurer +8
Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-elec…
Silicon Quantum Dots with Counted Antimony Donor Implants
M. Singh, J. L. Pacheco, D. Perry +11
Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion be…
Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants
A. Shirkhorshidian, N. C. Bishop, J. Dominguez +4
We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced…
Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
L. A. Tracy, E. P. Nordberg, R. W. Young +9
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances…
Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots
E. P. Nordberg, H. L. Stalford, R. Young +10
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work…