49 citations · 100 across the 9 of their papers we have counts for
3 papers · 2 filters
High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
Iftekhar Chowdhury, MVS Chandrasekhar, Paul B Klein +2
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We discuss the…
Effect of crystallographic dislocations on the reverse performance of 4H-SiC p-n diodes
Feng Zhao, Mohammad M. Islam, Biplob K. Daas +1
A quantitative study was performed to investigate the impact of crystallographic dislocation defects, 21 including screw dislocation, basal plane dislocation, and threading edge di…
Doping Dependence of Thermal Oxidation on n-type 4H-SiC
B. K. Daas, M. M. Islam, I. A. Chowdhury +3
The doping dependence of dry thermal oxidation rates in n-type 4H-SiC was investigated. The oxidation was performed in the temperature range 1000C to 1200C for samples with nitroge…