4 citations · 8 across the 4 of their papers we have counts for
4 papers
A comparative study of SiC epitaxial growth in vertical hotwall CVD reactor using silane and dichlorosilane precursor gases
Tawhid Rana, MVS Chandrashekhar, Haizheng Song +1
SiC epitaxial films grown in an inverted chimney CVD reactor are analyzed and compared for growth rates, doping concentration and surface morphology using silane-propane-hydrogen a…
Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC
B. K. Daas, K. M. Daniels, T. S. Sudarshan +1
We show ~10x polariton-enhanced infrared reflectivity of epitaxial graphene on 4H-SiC, in SiC's restrahlen band (8-10um). By fitting measurements to theory, we extract the thicknes…
Graphene to Graphane: Novel Electrochemical Conversion
Kevin M. Daniels, B. Daas, R. Zhang +6
A novel electrochemical means to generate atomic hydrogen, simplifying the synthesis and controllability of graphane formation on graphene is presented. High quality, vacuum grown…
Effect of crystallographic dislocations on the reverse performance of 4H-SiC p-n diodes
Feng Zhao, Mohammad M. Islam, Biplob K. Daas +1
A quantitative study was performed to investigate the impact of crystallographic dislocation defects, 21 including screw dislocation, basal plane dislocation, and threading edge di…