49 citations · 100 across the 9 of their papers we have counts for
5 papers · 1 filter
High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
Iftekhar Chowdhury, MVS Chandrasekhar, Paul B Klein +2
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We discuss the…
Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC
B. K. Daas, K. M. Daniels, T. S. Sudarshan +1
We show ~10x polariton-enhanced infrared reflectivity of epitaxial graphene on 4H-SiC, in SiC's restrahlen band (8-10um). By fitting measurements to theory, we extract the thicknes…
Graphene to Graphane: Novel Electrochemical Conversion
Kevin M. Daniels, B. Daas, R. Zhang +6
A novel electrochemical means to generate atomic hydrogen, simplifying the synthesis and controllability of graphane formation on graphene is presented. High quality, vacuum grown…
Effect of crystallographic dislocations on the reverse performance of 4H-SiC p-n diodes
Feng Zhao, Mohammad M. Islam, Biplob K. Daas +1
A quantitative study was performed to investigate the impact of crystallographic dislocation defects, 21 including screw dislocation, basal plane dislocation, and threading edge di…
Doping Dependence of Thermal Oxidation on n-type 4H-SiC
B. K. Daas, M. M. Islam, I. A. Chowdhury +3
The doping dependence of dry thermal oxidation rates in n-type 4H-SiC was investigated. The oxidation was performed in the temperature range 1000C to 1200C for samples with nitroge…