4 citations · 8 across the 4 of their papers we have counts for
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cond-mat.mtrl-sci2012
A comparative study of SiC epitaxial growth in vertical hotwall CVD reactor using silane and dichlorosilane precursor gases
Tawhid Rana, MVS Chandrashekhar, Haizheng Song +1
SiC epitaxial films grown in an inverted chimney CVD reactor are analyzed and compared for growth rates, doping concentration and surface morphology using silane-propane-hydrogen a…
cond-mat.mtrl-sci2010★ 1 cited
Effect of crystallographic dislocations on the reverse performance of 4H-SiC p-n diodes
Feng Zhao, Mohammad M. Islam, Biplob K. Daas +1
A quantitative study was performed to investigate the impact of crystallographic dislocation defects, 21 including screw dislocation, basal plane dislocation, and threading edge di…