49 citations · 100 across the 9 of their papers we have counts for
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A comparative study of SiC epitaxial growth in vertical hotwall CVD reactor using silane and dichlorosilane precursor gases
Tawhid Rana, MVS Chandrashekhar, Haizheng Song +1
SiC epitaxial films grown in an inverted chimney CVD reactor are analyzed and compared for growth rates, doping concentration and surface morphology using silane-propane-hydrogen a…
Study of epitaxial graphene on non-polar 6H-SiC faces
B. K. Daas, K. Daniels, S. Shetu +2
We present epitaxial graphene (EG) growth on non-polar a-plane and m-plane 6H-SiC faces where material characterization is compared with that known for EG grown on polar faces. Ato…
Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene using IR Reflection Spectroscopy
B. K. Daas, W. K. Nomani, K. M. Daniels +3
We investigate molecular adsorption doping by electron withdrawing NO2 and electron donating NH3 on epitaxial graphene grown on C-face SiC substrates. Amperometric measurements sho…
High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy
MVS Chandrashekhar, Iftekhar Chowdhury, P. Kaminski +3
Thick, high-purity semi-insulating (SI)homoepitaxial layers on Si-face 4H-SiC weregrownsystematically, with resistivity \geq 109Ω-cmby maintaining high C/Si ratios 1.3-15 during gr…
High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
Iftekhar Chowdhury, MVS Chandrasekhar, Paul B Klein +2
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We discuss the…
Effect of crystallographic dislocations on the reverse performance of 4H-SiC p-n diodes
Feng Zhao, Mohammad M. Islam, Biplob K. Daas +1
A quantitative study was performed to investigate the impact of crystallographic dislocation defects, 21 including screw dislocation, basal plane dislocation, and threading edge di…
Doping Dependence of Thermal Oxidation on n-type 4H-SiC
B. K. Daas, M. M. Islam, I. A. Chowdhury +3
The doping dependence of dry thermal oxidation rates in n-type 4H-SiC was investigated. The oxidation was performed in the temperature range 1000C to 1200C for samples with nitroge…