activity
20092024
most citedSTM and RHEED study of the Si(001)-c(8x8) surface

18 citations · 140 across the 21 of their papers we have counts for

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Showing 2010Show all

4 papers · 1 filter

cond-mat.mtrl-sci2010★ 7 cited

The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays

I. V. Kucherenko, V. S. Vinogradov, N. N. Mel'nik +4

The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single h…

cond-mat.mtrl-sci2010★ 17 cited

Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED

L. V. Arapkina, V. A. Yuryev, K. V. Chizh +3

Pre-growth preparation of the Si(001) clean surface is a key process for Ge/Si UHV MBE. It usually includes pre-cleaning by liquid etchants, thermal pretreatment in UHV and removal…

cond-mat.mtrl-sci2010★ 11 cited

Phase transition between (2 x 1) and c(8 x 8) reconstructions observed on the Si(001) surface around 600C

L. V. Arapkina, V. A. Yuryev, V. M. Shevlyuga +1

The Si(001) surface subjected to different treatments in ultrahigh vacuum molecular beam epitaxy chamber for SiO film decomposition has been in situ investigated by reflected h…

cond-mat.mtrl-sci2010★ 18 cited

STM and RHEED study of the Si(001)-c(8x8) surface

Larisa V. Arapkina, Vladimir M. Shevlyuga, Vladimir A. Yuryev

The Si(001) surface deoxidized by short annealing at T~925C in the ultrahigh vacuum molecular beam epitaxy chamber has been in situ investigated by high resolution scanning tunnell…