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20102016
most citedStrong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals

426 citations · 3k across the 22 of their papers we have counts for

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Showing 2012Show all

6 papers · 1 filter

cond-mat.mes-hall2012★ 135 cited

Coherent Topological Transport on the Surface of Bi2Se3

Dohun Kim, Paul Syers, Nicholas P. Butch +2

The two-dimensional (2D) surface state of the three-dimensional strong topological insulator (STI) is fundamentally distinct from other 2D electron systems in that the Fermi arc en…

cond-mat.mtrl-sci2012★ 126 cited

Layer-by-layer entangled spin-orbital texture of the topological surface state in Bi2Se3

Z. -H. Zhu, C. N. Veenstra, G. Levy +7

We study Bi2Se3 by polarization-dependent angle-resolved photoemission spectroscopy (ARPES) and density-functional theory slab calculations. We find that the surface state Dirac fe…

cond-mat.str-el2012★ 175 cited

Hybridization, Inter-Ion Correlation, and Surface States in the Kondo Insulator SmB6

Xiaohang Zhang, N. P. Butch, P. Syers +3

As an exemplary Kondo insulator, SmB6 has been studied for several decades; however, direct evidence for the development of the Kondo coherent state and the evolution of the electr…

cond-mat.mes-hall2012★ 58 cited

Magnetothermoelectric properties of Bi2Se3

B. Fauqué, N. P. Butch, P. Syers +6

We present a study of entropy transport in Bi2Se3 at low temperatures and high magnetic fields. In the zero-temperature limit, the magnitude of the Seebeck coefficient quantitative…

cond-mat.mtrl-sci2012★ 83 cited

Intrinsic Electron-Phonon Resistivity in Bi2Se3 in the Topological Regime

Dohun Kim, Qiuzi Li, Paul Syers +4

We measure the temperature-dependent carrier density and resistivity of the topological surface state of thin exfoliated Bi2Se3 in the absence of bulk conduction. When the gate-tun…

cond-mat.mes-hall2012★ 52 cited

Topological insulator quantum dot with tunable barriers

Sungjae Cho, Dohun Kim, Paul Syers +3

Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers…