776 citations · 4k across the 57 of their papers we have counts for
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cond-mat.mtrl-sci2019★ 123 cited
Metal Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field
Zhanbo Xia, Hareesh Chandrasekar, Wyatt Moore +8
Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an orde…
cond-mat.mtrl-sci2019★ 9 cited
Velocity Saturation in La-doped BaSnO3 Thin Films
Hareesh Chandrasekar, Junao Cheng, Tianshi Wang +11
BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properti…