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Modeling of High Composition AlGaN Channel HEMTs with Large Threshold Voltage
Sanyam Bajaj, Ting-Hsiang Hung, Fatih Akyol +2
We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed…
Epitaxial Growth of Large Area Single-Crystalline Few-Layer MoS2 with Room Temperature Mobility of 192 cm2V-1s-1
Lu Ma, Digbijoy N. Nath, Edwin W. Lee +4
We report on the vapor-solid growth of single crystalline few-layer MoS2 films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter lengt…
InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes
Sriram Krishnamoorthy, Fatih Akyol, Siddharth Rajan
InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction cont…
Growth and Electrical Characterization of 2D Layered MoS2/SiC Heterojunctions
Edwin W. Lee, Lu Ma, Digbijoy N. Nath +3
The growth and electrical characterization of a heterojunction formed between 2D layered p-MoS2 and nitrogen-doped 4H-SiC is reported. Direct growth of p-type MoS2 films on SiC was…