776 citations · 4k across the 57 of their papers we have counts for
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Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces
Pouya Moetakef, Tyler A. Cain, Daniel G. Ouellette +7
Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic…
A heterojunction modulation-doped Mott transistor
Junwoo Son, Siddharth Rajan, Susanne Stemmer +1
A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron-correlation-induced Mott metal-to-insulator…
Demonstration of Forward Inter-band Tunneling in GaN by Polarization Engineering
Sriram Krishnamoorthy, Pil Sung Park, Siddharth Rajan
We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling…
First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures
Rohan Mishra, Oscar D. Restrepo, Siddharth Rajan +1
We propose a new method to calculate polarization induced interfacial charges in semiconductor heterostructures using classical electrostatics applied to real-space band diagrams f…