activity
20012021
most citedInfrared Dielectric Resonator Metamaterial

433 citations · 1.1k across the 19 of their papers we have counts for

collaborators
Showing cond-mat.mes-hallShow all

11 papers · 1 filter

cond-mat.mes-hall2019★ 2 cited

Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures

M. J. Curry, M. Rudolph, T. D. England +12

High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandw…

cond-mat.mes-hall2018★ 12 cited

All-electrical universal control of a double quantum dot qubit in silicon MOS

Patrick Harvey-Collard, Ryan M. Jock, N. Tobias Jacobson +12

Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically contro…

cond-mat.mes-hall2017★ 59 cited

Ion Implantation for Deterministic Single Atom Devices

J. L. Pacheco, M. Singh, D. L. Perry +8

We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion bea…

cond-mat.mes-hall2017★ 22 cited

Quantum dots with split enhancement gate tunnel barrier control

S. Rochette, M. Rudolph, A. -M. Roy +10

We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separ…

cond-mat.mes-hall2017★ 75 cited

High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism

Patrick Harvey-Collard, Benjamin D'Anjou, Martin Rudolph +9

The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge mappin…

cond-mat.mes-hall2016★ 7 cited

Fabrication of quantum dots in undoped Si/SiGe heterostructures using a single metal-gate layer

T. M. Lu, J. K. Gamble, R. P. Muller +9

Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs uti…