26 citations · 365 across the 56 of their papers we have counts for
10 papers · 2 filters
Application of elastic mid-IR-laser-light scattering for non-destructive inspection in microelectronics
V. P. Kalinushkin, V. A. Yuryev, O. V. Astafiev +2
Some possible applications of the low-angle mid-IR-light scattering technique and some recently developed on its basis methods for non-destructive inspection and investigation of s…
Large-scale defect accumulations in Czochralski-grown silicon
V. P. Kalinushkin, A. N. Buzynin, V. A. Yuryev +1
Czochralski-grown silicon crystals were studied by the techniques of the low-angle mid-IR-light scattering and electron-beam-induced current. The large-scale accumulations of elect…
Application of elastic mid-IR light scattering for inspection of internal gettering operations
O. V. Astafiev, A. N. Buzynin, V. P. Kalinushkin +1
Recently, the internal gettering process has become one of the main operations for manufacturing of semiconductor devices of CZ Si. However, methods for the direct inspection of th…
Optical beam-induced scattering mode of mid-IR laser microscopy: a method for defect investigation in near-surface and near-interface regions of bulk semiconductors
O. V. Astafiev, V. P. Kalinushkin, V. A. Yuryev
This paper presents a new technique of optical beam-induced scattering of mid-IR-laser radiation, which is a special mode of the recently developed scanning mid-IR-laser microscopy…
Influence of photoexcitation depth on luminescence spectra of bulk GaAs single crystals: application to defect structure characterization
V. A. Yuryev, V. P. Kalinushkin, A. V. Zayats +2
The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface layers of different thicknesses using for excitation the light with the wavelength…
Influence of Photoexcitation Depth on Luminescence Spectra of Bulk GaAs Single Crystals and Defect Structure Characterization
V. A. Yuryev, V. P. Kalinushkin, A. V. Zayats +2
The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface layers of different thicknesses using for excitation the light with the wavelength…
Mid-IR-laser microscopy as a tool for defect investigation in bulk semiconductors
O. V. Astafiev, V. P. Kalinushkin, V. A. Yuryev
A non-destructive optical technique described in this paper is an effective new tool for the investigation of defects in semiconductors. The basic instrument for this technique---a…
Nucleation of Ge clusters at high temperatures on Ge/Si(001) wetting layer
V. A. Yuryev, L. V. Arapkina
Difference in nucleation of Ge quantum dots during Ge deposition at low (< 600C) and high (> 600C) temperatures on the Si(001) surface is studied by high resolution scanning tunnel…
Ge quantum dot arrays grown by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface: nucleation, morphology and CMOS compatibility
Vladimir A. Yuryev, Larisa V. Arapkina
Issues of morphology, nucleation and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleatio…
An initial phase of Ge hut array formation at low temperature on Si(001)
Larisa V. Arapkina, Vladimir A. Yuryev
We report a direct STM observation of Ge hut array nucleation on the Si(001) surface during ultrahigh vacuum molecular-beam epitaxy at 360C. Nuclei of pyramids and wedges have been…