313 citations · 822 across the 17 of their papers we have counts for
Showing 2020 · physics.app-phShow all
3 papers · 2 filters
physics.app-ph2020★ 1 cited
Enhanced gas sensing performance and all-electrical room temperature operation enabled by a WSe2/MoS2 heterojunction
Sushovan Dhara, Himani Jawa, Sayantan Ghosh +2
Gas sensors built using two-dimensional (2D) MoS2 have conventionally relied on a change in field-effect-transistor (FET) channel resistance or a change in Schottky contact/pn homo…
physics.app-ph2020★ 1 cited
Electrically Tunable Room Temperature Hysteresis Crossover in Underlap MoS FETs
Himani Jawa, Abin Varghese, Saurabh Lodha
Clockwise to anti-clockwise hysteresis crossover in current-voltage transfer characteristics of field effect transistors (FETs) with graphene and MoS channels holds significant…
physics.app-ph2020★ 10 cited
Charge trap layer enabled positive tunable V in -GaO gate stacks for enhancement mode transistors
Dipankar Biswas, Chandan Joishi, Jayeeta Biswas +2
-GaO based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving c…