313 citations · 822 across the 17 of their papers we have counts for
9 papers · 1 filter
Monolithic beta-Ga2O3 Bidirectional MOSFET
Pooja Sharma, Saurabh Lodha
We report a monolithic bidirectional dual-gate metal-oxide-semiconductor field effect transistor (MOSFET) fabricated on epitaxially grown beta-Ga2O3, demonstrating efficient two-wa…
Electrically Controlled Reversible Strain Modulation in MoS Field-effect Transistors via an Electro-mechanically Coupled Piezoelectric Thin Film
Abin Varghese, Adityanarayan Pandey, Pooja Sharma +3
Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible…
Nanomechanical resonators fabricated by atomic layer deposition on suspended 2D materials
Hanqing Liu, Saravana B. Basuvalingam, Saurabh Lodha +4
Atomic layer deposition (ALD), a layer-by-layer controlled method to synthesize ultrathin materials, provides various merits over other techniques such as precise thickness control…
Wavelength-Controlled Photocurrent Polarity Switching in BP-MoS Heterostructure
Himani Jawa, Sayantan Ghosh, Abin Varghese +2
Layered two-dimensional van der Waals (vdW) semiconductors and their heterostructures have been shown to exhibit positive photoconductance (PPC) in many studies. A few recent repor…
NbO high-k dielectric enabled electric field engineering of -GaO metal-insulator-semiconductor (MIS) diode
Prabhans Tiwari, Jayeeta Biswas, Chandan Joishi +1
We demonstrate an NbO/-GaO metal-insulator-semiconductor (MIS) hetero-junction diode with NbO as the high-k dielectric insulator for more eff…
Enhanced gas sensing performance and all-electrical room temperature operation enabled by a WSe2/MoS2 heterojunction
Sushovan Dhara, Himani Jawa, Sayantan Ghosh +2
Gas sensors built using two-dimensional (2D) MoS2 have conventionally relied on a change in field-effect-transistor (FET) channel resistance or a change in Schottky contact/pn homo…