64 citations · 149 across the 5 of their papers we have counts for
4 papers · 1 filter
Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants
A. Shirkhorshidian, N. C. Bishop, J. Dominguez +4
We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced…
Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
L. A. Tracy, E. P. Nordberg, R. W. Young +9
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances…
Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots
E. P. Nordberg, H. L. Stalford, R. Young +10
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work…
Enhancement mode double top gated MOS nanostructures with tunable lateral geometry
E. P. Nordberg, G. A. Ten Eyck, H. L. Stalford +11
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. S…