227 citations · 406 across the 18 of their papers we have counts for
4 papers · 1 filter
Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS transistor by RMS noise analysis
Stefano Bigoni, Marco L. V. Tagliaferri, Dario Tamascelli +5
We explore phonon-mediated quantum transport through electronic noise characterization of a commercial CMOS transistor. The device behaves as a single electron transistor thanks to…
Measuring the Temperature of a Mesoscopic Quantum Electron System by means of Single Electron Statistics
Enrico Prati, Matteo Belli, Marco Fanciulli +1
We measure the temperature of a mesoscopic system consisting of an ultra-dilute two dimensional electron gas at the interface in a metal-oxide-semiconductor field effect…
Time Dependent Inelastic Emission and Capture of Localized Electrons in Si n-MOSFETs Under Microwave Irradiation
Enrico Prati, Marco Fanciulli, Alessandro Calderoni +2
Microwave irradiation causes voltage fluctuations in solid state nanodevices. Such an effect is relevant in atomic electronics and nanostructures for quantum information processing…
Effect of the Triplet State on the Random Telegraph Signal in Si n-MOSFETs
Enrico Prati, Marco Fanciulli, Giorgio Ferrari +1
We report on the static magnetic field dependence of the random telegraph signal (RTS) in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense…