U. Grossner

most citedCoulomb correlation effects in zinc monochalcogenides

91 citations · 186 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2006★ 28 cited

Comparison of near-interface traps in Al $_{2}$ O $_{3}$ /4H-SiC and Al $_{2}$ O $_{3}$ /SiO $_{2}$ /4H-SiC structures

Marc Avice, Ulrike Grossner, Ioana Pintilie +3

Aluminum oxide (Al2O3) has been grown by atomic layer deposition on n-type 4H-SiC with and without a thin silicon dioxide (SiO2) intermediate layer. By means of Capacitance Voltage…

cond-mat.mtrl-sci2006★ 91 cited

Coulomb correlation effects in zinc monochalcogenides

S. Zh. Karazhanov, P. Ravindran, U. Grossner +3

Electronic structure and band characteristics for zinc monochalcogenides with zinc-blende- and wurtzite-type structures are studied by first-principles density-functional-theory ca…

cond-mat.mtrl-sci2006★ 67 cited

Electronic structure and band parameters for ZnX (X = O, S, Se, Te)

S. Zh. Karazhanov, P. Ravindran, U. Grossner +3

First-principles density-functional calculations have been performed for zinc monochalcogenides with zinc-blende- and wurtzite-type structures. It is shown that the local-density a…

Comparison of near-interface traps in Al2​O3​/4H-SiC and Al2​O3​/SiO2​/4H-SiC structures

Coulomb correlation effects in zinc monochalcogenides

Electronic structure and band parameters for ZnX (X = O, S, Se, Te)

Comparison of near-interface traps in Al $_{2}$ O $_{3}$ /4H-SiC and Al $_{2}$ O $_{3}$ /SiO $_{2}$ /4H-SiC structures