1 citations · 1 across the 5 of their papers we have counts for
5 papers
Device contacts as spin-state selectors for silicon vacancies in 4H-SiC
Aurora Teien, Maria Mendes Martins, Andreas Gottscholl +11
Optically addressable defect spins in semiconductors are promising building blocks for scalable quantum technologies. Yet, the consequences of conventional contact schemes used in…
Muonium dynamics as a probe for depth-resolved properties of 4H-SiC
Maria Mendes Martins, Piyush Kumar, Marianne E. Bathen +5
This study establishes a baseline for muonium (Mu) charge-exchange dynamics in n-type 4H-SiC through a detailed low-energy muon spin rotation (LE-uSR) investigation. Epitaxially gr…
Impact of strain on electron-phonon coupling of quantum emitters
Vytautas Žalandauskas, Rokas Silkinis, Lukas Razinkovas +6
Defects in semiconductors acting as optically active spin qubits are intriguing objects of fundamental study and future technological developments. These defect-based color centers…
Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
Yann Jousseaume, Piyush Kumar, Marianne Etzelmüller Bathen +3
Mesa- and trench-patterned surfaces of 4H-SiC(0001) 4{\textdegree}off wafers were structured in macrosteps using Si melting in a SiC-Si-SiC sandwich configuration. Si spreading dif…
Observation and manipulation of charge carrier distribution at the SiO/Si interface
Maria M. Martins, Piyush Kumar, Marianne E. Bathen +3
Using low-energy muons, we map the charge carrier concentration as a function of depth and electric field across the \SiOSi interface up to a depth of \SI{100}{\nano\meter} in Si-b…