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Device contacts as spin-state selectors for silicon vacancies in 4H-SiC
Aurora Teien, Maria Mendes Martins, Andreas Gottscholl +11
Optically addressable defect spins in semiconductors are promising building blocks for scalable quantum technologies. Yet, the consequences of conventional contact schemes used in…
Muonium dynamics as a probe for depth-resolved properties of 4H-SiC
Maria Mendes Martins, Piyush Kumar, Marianne E. Bathen +5
This study establishes a baseline for muonium (Mu) charge-exchange dynamics in n-type 4H-SiC through a detailed low-energy muon spin rotation (LE-uSR) investigation. Epitaxially gr…
Impact of strain on electron-phonon coupling of quantum emitters
Vytautas Žalandauskas, Rokas Silkinis, Lukas Razinkovas +6
Defects in semiconductors acting as optically active spin qubits are intriguing objects of fundamental study and future technological developments. These defect-based color centers…
Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
Yann Jousseaume, Piyush Kumar, Marianne Etzelmüller Bathen +3
Mesa- and trench-patterned surfaces of 4H-SiC(0001) 4{\textdegree}off wafers were structured in macrosteps using Si melting in a SiC-Si-SiC sandwich configuration. Si spreading dif…