Defect Profiling of Oxide-Semiconductor Interfaces Using Low-Energy Muons

Abstract

Muon spin rotation with low-energy muons (LEμSR) is a powerful nuclear method where electrical and magnetic properties of surface-near regions and thin films can be studied on a length scale of $\approx$\SI{200}{\nano\meter}. In this work, we show the potential of utilizing low-energy muons for a depth-resolved characterization of oxide-semiconductor interfaces, i.e. for silicon (Si) and silicon carbide (4H-SiC). Silicon dioxide (SiO${}_2$) grown by plasma-enhanced chemical vapor deposition (PECVD) and by thermal oxidation of the SiO${}_2$-semiconductor interface are compared with respect to interface and defect formation. The nanometer depth resolution of μallows for a clear distinction between the oxide and semiconductor layers, while also quantifying the extension of structural changes caused by the oxidation of both Si and SiC.

The following article has been submitted to Advanced Materials Interfaces