Temperature dependence of on-state inter-terminal capacitances (Cgd and Cgs) of SiC MOSFETs and frequency limitations of their measurements

Alexander Tsibizov, Roger Stark, Ulrike Grossner

Inter-terminal capacitances (ITCs) have major influence on the dynamic performance of power SiC MOSFETs. Knowledge of the exact values for the ITCs is required in order to perform…