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20052018
most citedDependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur

273 citations · 1.2k across the 11 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

7 papers · 1 filter

cond-mat.mtrl-sci2010★ 1 cited

Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve

B. G. Park, J. Wunderlich, X. Marti +9

Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard…

cond-mat.mtrl-sci2006★ 223 cited

Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions

Jun Hayakawa, Shoji Ikeda, Young Min Lee +2

We report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) annea…

cond-mat.mtrl-sci2006★ 138 cited

Current-induced magnetization switching in MgO barrier based magnetic tunnel junctions with CoFeB/Ru/CoFeB synthetic ferrimagnetic free layer

Jun Hayakawa, Shoji Ikeda, Young Min Lee +5

We report the intrinsic critical current density (Jc0) in current-induced magnetization switching and the thermal stability factor (E/kBT, where E, kB, and T are the energy potenti…

cond-mat.mtrl-sci2006★ 23 cited

Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions

Shoji Ikeda, Jun Hayakawa, Young Min Lee +2

We investigated the relationship between the tunnel magnetoresistance (TMR) ratio and the electrode structure in MgO-barrier magnetic tunnel junctions (MTJs). The TMR ratio in a MT…

cond-mat.mtrl-sci2006★ 179 cited

Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer

Young Min Lee, Jun Hayakawa, Shoji Ikeda +2

We investigated the relationship between tunnel magnetoresistance (TMR) ratio and the crystallization of CoFeB layers through annealing in magnetic tunnel junctions (MTJs) with MgO…

cond-mat.mtrl-sci2005★ 217 cited

Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions

Jun Hayakawa, Shoji Ikeda, Young Min Lee +5

Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities Jc required for cu…