activity
20072022
most citedA Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity

79 citations · 319 across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.mes-hall2022★ 8 cited

Electrochemical Shot-Noise of a Redox Monolayer

Simon Grall, Shuo Li, Laurent Jalabert +4

Redox monolayers are the base for a wide variety of devices including high-frequency molecular diodes or biomolecular sensors. We introduce a formalism to describe the electrochemi…

cond-mat.mes-hall2014★ 29 cited

On the Mechanical and Electronic Properties of Thiolated Gold Nanocrystals

K. Smaali, S. Desbief, G. Foti +7

We present a quantitative exploration, combining experiment and simulation, of the mechanical and electronic properties, as well as the modifications induced by an alkylthiolated c…

cond-mat.mes-hall2012★ 13 cited

Role of Hydration on the Electronic Transport through Molecular Junctions on Silicon

Nicolas Clement, David Guerin, Stephane Pleutin +2

Molecular electronics is a fascinating area of research with the ability to tune device properties by a chemical tailoring of organic molecules. However, molecular electronics devi…

cond-mat.mes-hall2012★ 51 cited

Conductance statistics from a large array of sub-10 nm molecular junctions

Kacem Smaali, Nicolas Clement, Gilles Patriarche +1

Devices made of few molecules constitute the miniaturization limit that both inorganic and organic-based electronics aspire to reach. However, integration of millions of molecular…

cond-mat.mes-hall2011★ 44 cited

Large array of sub-10 nm single-grain Au nanodots for use in nanotechnology

N. Clement, G. Patriarche, K. Smaali +5

A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing…

cond-mat.mes-hall2011★ 13 cited

Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel

Nicolas Clement, Katsuhiko Nishiguchi, Akira Fujiwara +1

An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However,…