A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity

Abstract

We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements also show that ionic strength of the surrounding electrolyte has a minimal effect on the overall noise. Dielectric polarization noise seems to be at the origin of the 1/f noise in our devices. The estimated spectral density of charge noise Sq = 1.6x10-2 e/sqr(Hz) at 10 Hz opens the door to metrological studies with these SiNW-FETs for the electrical detection of a small number of molecules.

One file including paper (with 3 figures) and supplementary information (with 5 figures). Submitted

References in corpus (3)

• Parallel Core-Shell Metal-Dielectric-Semiconductor Germanium Nanowires for High Current Surround Gate Field Effect Transistors
• One-by-one trap activation in silicon nanowire transistors
• A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity

Cited by in corpus (2)

• One-by-one trap activation in silicon nanowire transistors
• A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity