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cond-mat.mes-hall2010★ 79 cited
A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity
N. Clement, K. Nishiguchi, J. F. Dufreche +3
We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-nois…
cond-mat.mes-hall2007★ 29 cited
1/f Tunnel Current Noise through Si-bound Alkyl Monolayers
Nicolas Clement, Stephane Pleutin, Oliver Seitz +2
We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear…