21 citations · 27 across the 2 of their papers we have counts for
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cond-mat.mes-hall2017
Near-thermal limit gating in heavily-doped III-V semiconductor nanowires using polymer electrolytes
A. R. Ullah, D. J. Carrad, P. Krogstrup +2
Doping is a common route to reducing nanowire transistor on-resistance but has limits. High doping level gives significant loss in gate performance and ultimately complete gate fai…
cond-mat.mes-hall2017
Towards low-dimensional hole systems in Be-doped GaAs nanowires
A. R. Ullah, J. G. Gluschke, P. Krogstrup +3
GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs n…