activity
20062025
most citedElectrical switching of an antiferromagnet

1.5k citations · 3.2k across the 27 of their papers we have counts for

collaborators

27 papers

cond-mat.mtrl-sci2025★ 1 cited

Sub-nanosecond heat-based logic, writing and reset in an antiferromagnetic magnetoresistive memory

M. Surynek, A. Farkas, J. Zubac +9

Thermal logic aims to create thermal counterparts to electronic circuits. In this work, we investigate experimentally the response of an analog memory device based on a thin film o…

cond-mat.mtrl-sci2021★ 10 cited

Hysteretic effects and magnetotransport of electrically switched CuMnAs

Jan Zubáč, Zdeněk Kašpar, Filip Krizek +5

Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetor…

physics.app-ph2020★ 36 cited

Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs

Tomas Janda, Joao Godinho, Tomas Ostatnicky +23

Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microsco…

cond-mat.mtrl-sci2018★ 158 cited

Electrically induced and detected Néel vector reversal in a collinear antiferromagnet

J. Godinho, H. Reichlova, D. Kriegner +11

Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferroma…

physics.app-ph2017★ 6 cited

THz electrical writing speed in an antiferromagnetic memory

K. Olejnik, T. Seifert, Z. Kaspar +11

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated…

cond-mat.mtrl-sci2015★ 268 cited

Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

D. Kriegner, K. Vyborny, K. Olejnik +10

A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated anti…