257 citations · 486 across the 12 of their papers we have counts for
12 papers
Depth Control of Room-Temperature Quantum Emitters in Gallium Nitride
Alexandros Bampis, Johann Stachurski, Anna Schwab +3
Bright quantum emitters are key components for quantum communication systems. Radiative point defects in gallium nitride (GaN) are promising candidates for room-temperature single-…
Sputtered AlN buffer layer for low-loss crystalline AlN-on-sapphire integrated photonics
Samuele Brunetta, Samantha Sbarra, Brandon Shuen Yi Loke +4
In recent years, aluminum nitride (AlN) has emerged as an attractive material for integrated photonics due to its low propagation losses, wide transparency window, and presence of…
Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry
Mahmoud Elhajhasan, Wilken Seemann, Katharina Dudde +9
We present the simultaneous optical and thermal analysis of a freestanding photonic semiconductor membrane made from wurtzite III-nitride material. By linking micro-photoluminescen…
Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
Anthonin Delphan, Maxim N. Makhonin, Tommi Isoniemi +7
Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here…
Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots
Johann Stachurski, Sebastian Tamariz, Gordon Callsen +2
III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution…
Imaging non-radiative point defects buried in quantum wells using cathodoluminescence
Thomas Weatherley, Wei Liu, Vitaly Osokin +5
Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures…