257 citations · 486 across the 12 of their papers we have counts for
5 papers · 1 filter
Depth Control of Room-Temperature Quantum Emitters in Gallium Nitride
Alexandros Bampis, Johann Stachurski, Anna Schwab +3
Bright quantum emitters are key components for quantum communication systems. Radiative point defects in gallium nitride (GaN) are promising candidates for room-temperature single-…
Towards bright and pure single photon emitters at 300 K based on GaN quantum dots on silicon
Sebastian Tamariz, Gordon Callsen, Johann Stachurski +3
Quantum dots (QDs) based on III-nitride semiconductors are promising for single photon emission at non-cryogenic temperatures due to their large exciton binding energies. Here, we…
Propagating Polaritons in III-Nitride Slab Waveguides
Joachim Ciers, Jonas G. Roch, Jean-François Carlin +3
We report on III-nitride waveguides with c-plane GaN/AlGaN quantum wells in the strong light-matter coupling regime supporting propagating polaritons. They feature a normal mode sp…
On thresholdless lasing features in high- nitride nanobeam cavities: a quantum optical study
Stefan T. Jagsch, Noelia Vico Triviño, Frederik Lohof +11
Exploring the limits of spontaneous emission coupling is not only one of the central goals in the development of nanolasers, it is also highly relevant regarding future large-scale…
Large K-exciton dynamics in GaN epilayers: the non-thermal and thermal regime
A. Vinattieri, F. Bogani, L. Cavigli +7
We present a detailed investigation concerning the exciton dynamics in GaN epilayers grown on c-plane sapphire substrates, focussing on the exciton formation and the transition fro…