430 citations · 2.3k across the 9 of their papers we have counts for
9 papers
Fractional Quantum Hall Phase Transitions and Four-flux Composite Fermions in Graphene
Benjamin E. Feldman, Andrei J. Levin, Benjamin Krauss +4
Graphene and its multilayers have attracted considerable interest owing to the fourfold spin and valley degeneracy of their charge carriers, which enables the formation of a rich v…
Unconventional Sequence of Fractional Quantum Hall States in Suspended Graphene
Benjamin E. Feldman, Benjamin Krauss, Jurgen H. Smet +1
Interactions among electrons can give rise to striking collective phenomena when the kinetic energy of charge carriers is suppressed. One example is the fractional quantum Hall eff…
Raman Scattering at Pure Graphene Zigzag Edges
Benjamin Krauss, Péter Nemes-Incze, Viera Skakalova +3
Theory has predicted rich and very distinct physics for graphene devices with boundaries that follow either the armchair or zigzag crystallographic directions. A prerequisite to di…
Electronic decoupling of an epitaxial graphene monolayer by gold intercalation
Isabella Gierz, Takayuki Suzuki, Dong Su Lee +7
The application of graphene in electronic devices requires large scale epitaxial growth. The presence of the substrate, however, usually reduces the charge carrier mobility conside…
Hot Phonons in an Electrically Biased Graphene Constriction
Dong-Hun Chae, Benjamin Krauss, Klaus von Klitzing +1
Phonon carrier interactions can have significant impact on device performance. They can be probed by measuring the phonon lifetime, which reflects the interaction strength of a pho…
Graphene on a hydrophobic substrate: Doping reduction and hysteresis suppression under ambient conditions
Myrsini Lafkioti, Benjamin Krauss, Timm Lohmann +4
The intrinsic doping level of graphene prepared by mechanical exfoliation and standard lithography procedures on thermally oxidized silicon varies significantly and seems to depend…
Band structure engineering of epitaxial graphene on SiC by molecular doping
Camilla Coletti, Christian Riedl, Dong Su Lee +5
Epitaxial graphene on SiC(0001) suffers from strong intrinsic n-type doping. We demonstrate that the excess negative charge can be fully compensated by non-covalently functionalizi…
Laser-induced disassembly of a graphene single crystal into a nano-crystalline network
Benjamin Krauss, Timm Lohmann, Dong-Hun Chae +3
We report about investigations of time-dependent structural modifications in single crystal graphene due to laser irradiation even at moderate power levels of 1mW in a diffraction…
Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2
Dong Su Lee, Christian Riedl, Benjamin Krauß +3
Raman spectra were measured for mono-, bi- and trilayer graphene grown on SiC by solid state graphitization, whereby the number of layers was pre-assigned by angle-resolved ultravi…