430 citations · 2.3k across the 9 of their papers we have counts for
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cond-mat.mes-hall2009★ 428 cited
Graphene on a hydrophobic substrate: Doping reduction and hysteresis suppression under ambient conditions
Myrsini Lafkioti, Benjamin Krauss, Timm Lohmann +4
The intrinsic doping level of graphene prepared by mechanical exfoliation and standard lithography procedures on thermally oxidized silicon varies significantly and seems to depend…
cond-mat.mtrl-sci2009★ 416 cited
Band structure engineering of epitaxial graphene on SiC by molecular doping
Camilla Coletti, Christian Riedl, Dong Su Lee +5
Epitaxial graphene on SiC(0001) suffers from strong intrinsic n-type doping. We demonstrate that the excess negative charge can be fully compensated by non-covalently functionalizi…