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20082013
most citedRaman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2

430 citations · 2.3k across the 9 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

5 papers · 1 filter

cond-mat.mtrl-sci2010★ 186 cited

Raman Scattering at Pure Graphene Zigzag Edges

Benjamin Krauss, Péter Nemes-Incze, Viera Skakalova +3

Theory has predicted rich and very distinct physics for graphene devices with boundaries that follow either the armchair or zigzag crystallographic directions. A prerequisite to di…

cond-mat.mtrl-sci2010★ 242 cited

Electronic decoupling of an epitaxial graphene monolayer by gold intercalation

Isabella Gierz, Takayuki Suzuki, Dong Su Lee +7

The application of graphene in electronic devices requires large scale epitaxial growth. The presence of the substrate, however, usually reduces the charge carrier mobility conside…

cond-mat.mtrl-sci2009★ 416 cited

Band structure engineering of epitaxial graphene on SiC by molecular doping

Camilla Coletti, Christian Riedl, Dong Su Lee +5

Epitaxial graphene on SiC(0001) suffers from strong intrinsic n-type doping. We demonstrate that the excess negative charge can be fully compensated by non-covalently functionalizi…

cond-mat.mtrl-sci2008★ 224 cited

Laser-induced disassembly of a graphene single crystal into a nano-crystalline network

Benjamin Krauss, Timm Lohmann, Dong-Hun Chae +3

We report about investigations of time-dependent structural modifications in single crystal graphene due to laser irradiation even at moderate power levels of 1mW in a diffraction…

cond-mat.mtrl-sci2008★ 430 cited

Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2

Dong Su Lee, Christian Riedl, Benjamin Krauß +3

Raman spectra were measured for mono-, bi- and trilayer graphene grown on SiC by solid state graphitization, whereby the number of layers was pre-assigned by angle-resolved ultravi…