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Characterization of hexagonal boron nitride layers on nickel surfaces by low-energy electron microscopy
P. C. Mende, Q. Gao, A. Ismach +5
The thickness and interfacial geometry of hexagonal boron nitride (hBN) films grown by chemical vapor deposition on polycrystalline nickel foils is studied using low-energy electro…
Dielectric Thickness Dependence of Carrier Mobility in Graphene with HfO2 Top Dielectric
Babak Fallahazad, Seyoung Kim, Luigi Colombo +1
We investigate the carrier mobility in mono- and bi-layer graphene with a top HfO2 dielectric, as a function of the HfO2 film thickness and temperature. The results show that the c…
Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
Seyoung Kim, Junghyo Nah, Insun Jo +5
We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atom…