11.3k citations · 16.3k across the 11 of their papers we have counts for
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Quantum engineering of transistors based on 2D materials heterostructures
Giuseppe Iannaccone, Francesco Bonaccorso, Luigi Colombo +1
Quantum engineering entails atom by atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fos…
Scaling Properties of Polycrystalline Graphene: A Review
Andreas Isacsson, Aron W. Cummings, Luciano Colombo +3
We present an overview of the electrical, mechanical, and thermal properties of polycrystalline graphene. Most global properties of this material, such as the charge mobility, ther…
Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors
Cheng Gong, Hengji Zhang, Weihua Wang +3
Tunnel field effect transistors (TFETs) based on vertical stacking of two dimensional materials are of interest for low-power logic devices. The monolayer transition metal dichalco…
Production, Processing and Placement of Graphene and Two Dimensional Crystals
F. Bonaccorso, A. Lombardo, T. Hasan +3
Graphene is at the centre of an ever growing research effort due to its unique properties, interesting for both fundamental science and applications. A key requirement for applicat…
Graphene films with large domain size by a two-step chemical vapor deposition process
Xuesong Li, Carl W. Magnuson, Archana Venugopal +12
The fundamental properties of graphene are making it an attractive material for a wide variety of applications. Various techniques have been developed to produce graphene and recen…
Large domain graphene
Xuesong Li, Carl W. Magnuson, Archana Venugopal +3
Graphene growth by chemical vapor deposition has received a lot of attention recently owing to the ease with which large area films can be grown, but growth of large domain or equi…