11.3k citations · 12.6k across the 7 of their papers we have counts for
Showing 2009 · cond-mat.mes-hallShow all
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cond-mat.mes-hall2009★ 13 cited
Scaling Properties of Ge-SixGe1-x Core-Shell Nanowire Field Effect Transistors
Junghyo Nah, En-Shao Liu, Kamran M. Varahramyan +3
We demonstrate the fabrication of high-performance Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain, and systematically investigate their…
cond-mat.mes-hall2009★ 1k cited
Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
Seyoung Kim, Junghyo Nah, Insun Jo +5
We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atom…