66 citations · 487 across the 17 of their papers we have counts for
13 papers · 1 filter
The impact of stochastic incorporation on atomic-precision Si:P arrays
Jeffrey A. Ivie, Quinn Campbell, Justin C. Koepke +9
Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within 1 nm of a target…
Valley splitting of single-electron Si MOS quantum dots
John King Gamble, Patrick Harvey-Collard, N. Tobias Jacobson +10
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy state…
Fabrication of quantum dots in undoped Si/SiGe heterostructures using a single metal-gate layer
T. M. Lu, J. K. Gamble, R. P. Muller +9
Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs uti…
Multivalley effective mass theory simulation of donors in silicon
John King Gamble, N. Tobias Jacobson, Erik Nielsen +4
Last year, Salfi et al. made the first direct measurements of a donor wave function and found extremely good theoretical agreement with atomistic tight-binding [Salfi et al., Nat.…
Efficient self-consistent quantum transport simulator for quantum devices
Xujiao Gao, Denis Mamaluy, Erik Nielsen +6
We present a self-consistent one-dimensional (1D) quantum transport simulator based on the Contact Block Reduction (CBR) method, aiming for very fast and robust transport simulatio…
QCAD Simulation and Optimization of Semiconductor Quantum Dots
Xujiao Gao, Erik Nielsen, Richard P. Muller +5
We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling multi-dimensional quantum devices, particularly silicon multi-quantum dots (QDs) developed for q…