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most citedIn-Grain Ferroelectric Switching in Sub-5 nm Thin AlScN Films at 1 V

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cond-mat.mtrl-sci2026

Three Million Years Opposite State Data Retention in Partially Switched Wurtzite Ferroelectrics

Maike Gremmel, Roberto Guido, Victor Witte +3

Ferroelectric memories based on the wurtzite-structured ferroelectrics are projected to store information for more than 3 million years at 150C. These results are extracted by comb…