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most citedIn-Grain Ferroelectric Switching in Sub-5 nm Thin AlScN Films at 1 V

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cond-mat.mtrl-sci2025

The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN

Maike Gremmel, Chandrashekhar Prakash Savant, Debaditya Bhattacharya +3

This study explores the influence of boron incorporation on the structural and electrical properties of ferroelectric Aluminum Scandium Nitride (Al_{1-x}Sc_xN ) thin films, focusin…