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most citedIn-Grain Ferroelectric Switching in Sub-5 nm Thin AlScN Films at 1 V

2 citations · 4 across the 5 of their papers we have counts for

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cond-mat.mtrl-sci2023★ 1 cited

The Interplay Between Imprint, Wake-Up Like Effects and Domains in Ferroelectric AlScN

Maike Gremmel, Simon Fichtner

This paper investigates wake-up and imprint in ferroelectric AlScN films. The study employs a series of I-V and P-E measurements with varying electric field amplitudes and voltage…

cond-mat.mtrl-sci2023★ 2 cited

In-Grain Ferroelectric Switching in Sub-5 nm Thin AlScN Films at 1 V

Georg Schönweger, Niklas Wolff, Md Redwanul Islam +5

Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution…