2 citations · 4 across the 5 of their papers we have counts for
5 papers
Three Million Years Opposite State Data Retention in Partially Switched Wurtzite Ferroelectrics
Maike Gremmel, Roberto Guido, Victor Witte +3
Ferroelectric memories based on the wurtzite-structured ferroelectrics are projected to store information for more than 3 million years at 150C. These results are extracted by comb…
The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN
Maike Gremmel, Chandrashekhar Prakash Savant, Debaditya Bhattacharya +3
This study explores the influence of boron incorporation on the structural and electrical properties of ferroelectric Aluminum Scandium Nitride (Al_{1-x}Sc_xN ) thin films, focusin…
Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films
Md Redwanul Islam, Niklas Wolff, Georg Schönweger +8
This article examines systematic oxygen (O)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al0.73Sc0.27N thin films, along with its impact…
The Interplay Between Imprint, Wake-Up Like Effects and Domains in Ferroelectric AlScN
Maike Gremmel, Simon Fichtner
This paper investigates wake-up and imprint in ferroelectric AlScN films. The study employs a series of I-V and P-E measurements with varying electric field amplitudes and voltage…
In-Grain Ferroelectric Switching in Sub-5 nm Thin AlScN Films at 1 V
Georg Schönweger, Niklas Wolff, Md Redwanul Islam +5
Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution…