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Fabrication and characterization of pseudo-spin-MOSFET
Y. Shuto, R. Nakane, H. Sukegawa +4
Recently spin-transistors receive considerable attention as a highly-functional building block of future integrated circuits. In order to realize spin-transistors, it is essential…
Nonvolatile SRAM architecture using MOSFET-based spin-transistors
Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara
The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using metal-oxide-semiconductor field-effect transistor (MOSFET) ty…
Magneto-optical properties of a new group-IV ferromagnetic semiconductor Ge1-xFex grown by low-temperature molecular beam epitaxy
Y. Shuto, M. Tanaka, S. Sugahara
A new group-IV ferromagnetic semiconductor, Ge1-xFex, was successfully grown by low-temperature molecular beam epitaxy (LT-MBE) without precipitation of ferromagnetic Ge-Fe interme…
High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping
A. M. Nazmul, T. Amemiya, Y. Shuto +2
We show that suitably-designed magnetic semiconductor heterostructures consisting of Mn delta-doped GaAs and p-type AlGaAs layers, in which the locally high concentration of magnet…