Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing

Abstract

The authors demonstrated that a full-Heusler Co2FeGe (CFG) alloy thin film was epitaxially grown by rapid-thermal-annealing-induced germanidation of an Fe/Co/pseudo-Ge(001)-on-insulator (GOI) multilayer formed on a Si-on-insulator (SOI) substrate. X-ray diffraction (XRD) measurements with the out-of-plane and in-plane configurations revealed that the CFG film was epitaxially grown along the [001] direction with the in-plane epitaxial relation of CFG[100]||GOI[100], although the film slightly contained a texture component. The strong (111) and (200) superlattice diffraction intensities indicated that the CFG film had a high degree of order for the L21 structure. Cross-sectional high-resolution transmission electron microscopy images of the film implied that the film had the dominant epitaxial and slight texture components, which was consistent with the XRD measurements. The epitaxial component was grown directly on the BOX layer of the SOI substrate without the formation of any interfacial layer.

arXiv comment16 pages, 4 figures

References in corpus (4)

• Analysis of L21-ordering in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing
• Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture
• Quantitative analysis of atomic disorders in full-Heusler Co2FeSi alloy thin films using x-ray diffraction with Co-Ka and Cu-Ka sources
• Characterization of half-metallic L2_1-phase Co_2FeSi full-Heusler alloy films formed by rapid thermal annealing

Cited by in corpus (1)

• Full-Heusler Co2FeSi alloy thin films with perpendicular magnetic anisotropy induced by MgO-interface