Characterization of half-metallic L2_1-phase Co_2FeSi full-Heusler alloy films formed by rapid thermal annealing

Abstract

The authors developed a preparation technique of Co_2FeSi full-Heusler alloy films with the L2_1-ordered structure on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The Co_2FeSi full-Heusler alloy films were successfully formed by RTA-induced silicidation reaction between an ultrathin SOI (001) layer and Fe/Co layers deposited on it. The highly (110)-oriented L2_1-phase polycrystalline full-Heusler alloy films were obtained at the RTA temperature of 700 C. Crystallographic and magnetic properties of the RTA-formed full-Heusler alloy films were qualitatively the same as those of bulk full-Heusler alloy. This technique is compatible with metal source/drain formation process in advanced CMOS technology and would be applicable to the fabrication of the half-metallic source/drain of MOSFET type of spin transistors.

18 pages, 5 figures

References in corpus (2)

• Geometric, electronic, and magnetic structure of Co${}_2$FeSi: Curie temperature and magnetic moment measurements and calculations
• A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain

Cited by in corpus (4)

• Analysis of L21-ordering in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing
• Quantitative analysis of atomic disorders in full-Heusler Co2FeSi alloy thin films using x-ray diffraction with Co-Ka and Cu-Ka sources
• Full-Heusler Co2FeSi alloy thin films with perpendicular magnetic anisotropy induced by MgO-interface
• Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing