2.2k citations · 2.7k across the 26 of their papers we have counts for
26 papers
Spin-related transport in a polycrystalline NiCo2O4 film: Drastic current-induced change in resistivity-temperature characteristics via spin injection
Shiho Sugiyama, Masaaki Tanaka, Ryosho Nakane
We have studied spin-related transport in a polycrystalline NiCo2O4 (NCO) film on a MgAl2O4/Si(001) substrate, motivated by potential applications of the theoretical half-metallici…
Spin-transport characteristics in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET): Bias dependence of the spin polarization in Si and magnetoresistance in spin-valve signals
Shoichi Sato, Masaaki Tanaka, Ryosho Nakane
We have studied the spin transport characteristics of a spin metal-oxide-semiconductor field-effect transistor (spin MOSFET), particularly the bias voltage dependence of the electr…
Spin injection in Si-based ferromagnetic tunnel junctions with MgO/MgAl2O4 barriers:Experimental and theoretical investigation of barrier thickness-dependent spin tunneling efficiency
Baisen Yu, Shoichi Sato, Masaaki Tanaka +1
We have experimentally and theoretically investigated the spin transport in Fe/Mg/MgO/MgAl2O4/n+-Si(001) ferromagnetic tunnel junctions on a Si substrate, by systematically varying…
Spin injection and detection in a Si-based ferromagnetic tunnel junction: A theoretical model based on the band diagram and experimental demonstration
Baisen Yu, Shoichi Sato, Masaaki Tanaka +1
We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonst…
Performance enhancement of a spin-wave-based reservoir computing system utilizing different physical conditions
Ryosho Nakane, Akira Hirose, Gouhei Tanaka
The authors have numerically studied how to enhance reservoir computing performance by thoroughly extracting their spin-wave device potential for higher-dimensional information gen…
Electron spin transport in a metal-oxide-semiconductor Si two-dimensional inversion channel: Effect of hydrogen annealing on spin scattering mechanism and spin lifetime
Shoichi Sato, Masaaki Tanaka, Ryosho Nakane
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan Center for Spintronics Research Network (CSRN),…