Spin-related transport in a polycrystalline NiCo2O4 film: Drastic current-induced change in resistivity-temperature characteristics via spin injection
arXiv:2606.31563
Abstract
We have studied spin-related transport in a polycrystalline NiCo2O4 (NCO) film on a MgAl2O4/Si(001) substrate, motivated by potential applications of the theoretical half-metallicity of NCO to Si-based high-performance spin-transport devices. Our approach is to systematically measure and analyze the temperature dependence of the film's resistivity () with various in-plane currents (100 nA1 mA) and temperatures (4290 K). With increasing current, the curve changes drastically from semiconducting () to non-monotonic and eventually toward metallic (). A distinctive feature is that the single NCO film exhibits a characteristic of polycrystalline defective NCO at 100 nA, whereas it exhibits a characteristic of epitaxial less-defective NCO over a wide temperature range at 1 mA. This current-induced evolution of reflects the enhancement of the Curie temperature of defective regions near grain boundaries, accompanied by enhanced spin alignment there. We proposed a spin-related transport model that extends conventional hopping conduction models by incorporating the temperature- and current-dependent degree of spin alignment, as well as its spatial dependence inherent to polycrystalline NCO. This model comprehensively explains the interplay between the spin-alignment profile and transport mechanism. The analysis reveals that spin injection from grain bodies to grain boundaries enhances the spin alignment there and strengthens double-exchange interactions, facilitating conduction. This phenomenon strongly depends on both temperature and current. Our findings provide evidence of spin-polarized electrons inside the grain bodies, highlighting the potential of our polycrystalline NCO film as an efficient spin source. The present model is further supported by currentvoltage and magnetoresistance features.
27 pages, 15 figures