A. Ardenghi

activity

20222025

most citedTowards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to

β

-Ga2O3

15 citations · 27 across the 4 of their papers we have counts for

collaborators

4 papers

physics.optics2025

Spectral tuning of hyperbolic shear polaritons in monoclinic gallium oxide via isotopic substitution

Giulia Carini, Mohit Pradhan, Elena Gelzinyte +26

Hyperbolic phonon polaritons - hybridized modes arising from the ultrastrong coupling of infrared light to strongly anisotropic lattice vibrations in uniaxial or biaxial polar crys…

cond-mat.mtrl-sci2024★ 2 cited

Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge

Wenshan Chen, Kingsley Egbo, Huaide Zhang +2

The delivery of an elemental cation flux to the substrate surface in the oxide molecular beam epitaxy (MBE) chamber has been utilized not only for the epitaxial growth of oxide thi…

physics.app-ph2023★ 10 cited

Phase-selective growth of $κ$ - vs $β$ -Ga $_{2}$ O $_{3}$ and (In $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy

A. Ardenghi, O. Bierwagen, J. Lähnemann +4

Its piezo- and potentially ferroelectric properties make the metastable kappa polymorph of Ga $_{2}$ O $_{3}$ an interesting material for multiple applications, while In-incorporation int…

cond-mat.mtrl-sci2022★ 15 cited

Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to $β$ -Ga2O3

A. Ardenghi, O. Bierwagen, A. Falkenstein +4

The oxidation-related issues in controlling Si doping from the Si source material in oxide molecular beam epitaxy (MBE) is addressed by using solid SiO as an alternative source mat…

Spectral tuning of hyperbolic shear polaritons in monoclinic gallium oxide via isotopic substitution

Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge

Phase-selective growth of κ- vs β-Ga2​O3​ and (Inx​Ga1−x​)2​O3​ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy

Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β-Ga2O3

Phase-selective growth of $κ$ - vs $β$ -Ga $_{2}$ O $_{3}$ and (In $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy

Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to $β$ -Ga2O3