15 citations · 27 across the 4 of their papers we have counts for
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cond-mat.mtrl-sci2024★ 2 cited
Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge
Wenshan Chen, Kingsley Egbo, Huaide Zhang +2
The delivery of an elemental cation flux to the substrate surface in the oxide molecular beam epitaxy (MBE) chamber has been utilized not only for the epitaxial growth of oxide thi…
cond-mat.mtrl-sci2022★ 15 cited
Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to -Ga2O3
A. Ardenghi, O. Bierwagen, A. Falkenstein +4
The oxidation-related issues in controlling Si doping from the Si source material in oxide molecular beam epitaxy (MBE) is addressed by using solid SiO as an alternative source mat…